Superconducting titanium nitride films grown by directional reactive evaporation
نویسندگان
چکیده
We report a novel method of growing strongly-disordered superconducting titanium nitride (TiN) thin films by reactive electron-beam deposition. The normal state sheet resistance and critical temperature (Tc) can be tuned controlling the deposition pressure in range 1.1*10^-6 to 3.1*10^-5 mbar} film thickness d from 10nm 300nm. For thick films, reaches 1361 \Omega/\square T_c = 0.77K, which translates into an estimate for inductance as large L_\square 2.4nH/\square. Benefiting directionality evaporation, we fabricated RF test devices with micron-sized dimensions using resist mask lift-off process, would impossible sputtering or atomic layer methods. spectroscopic measurements result consistent values two different device geometries quality factors ranged Q 300-2200. loss is likely due presence oxynitride morphological composition our films. flexibility process suggest applications reactively-evaporated TiN making supporting structures around quantum circuits, such readout resonators compact on-chip filters.
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2021
ISSN: ['1089-7550', '0021-8979', '1520-8850']
DOI: https://doi.org/10.1063/5.0048819